IRF3205 MOSFET-TA220

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  1. Drain to source voltage Vds is 100V
  2. Gate to source voltage is ±20V
  3. On Resistance Rds(on) of 44mohm at Vgs of 10V
  4. Power dissipation Pd of 130W at 25°C

Additional information

Weight 20 g
Technical Details

Gate to source voltage is ±20V
On-Resistance Rds(on) of 8mohm at Vgs of 10V
Power dissipation (Pd) of 130W at 25°C
Continuous drain current (Id) of 110A at Vgs 10V and 25°C
Operating junction temperature range from -55°C to 175°C
Applications: Power Management, Industrial, Portable Devices, Consumer Electronics

Package Include

1 xIRF3205 MOSFET-TA220

Warranty

NO WARRANTY ON ELECTRONIC COMPONENTS

irf3205-datasheet

 

The IRF3205 MOSFET from International Rectifier is 100V single N channel HEXFET power MOSFET in the TO-220AB package. This MOSFET features extremely low on-resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET is well known to provide extremely efficiency and reliability which can be used in a wide variety of applications.
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