IRF540N – TO220
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- Drain to source voltage Vds is 100V
- Gate to source voltage is ±20V
- On Resistance Rds(on) of 44mohm at Vgs of 10V
- Power dissipation Pd of 130W at 25°C
Additional information
| Weight | 20 g |
|---|---|
| Package Include | 1 xIRF540N – TO220 |
| Warranty | NO WARRANTY ON ELECTRONIC COMPONENTS |
IRF540N-TO-220-3-MOSFET datasheet
The IRF540N (TO-220-3) MOSFET from International Rectifier is 100V single N channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on-resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET is well known to provide extremely efficiency and reliability which can be used in wide variety of applications.
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