BD-139 Transistor


In stock

  • Plastic casing NPN Transistor
  • Continuous Collector current (IC) is 1.5A
  • Collector-Emitter voltage (VCE) is 80 V
  • Collector-Base voltage (VCB) is 80V
  • Emitter Base Breakdown Voltage (VBE) is 5V
  • DC current gain (hfe) is 40 to 160
  • Note: Complete Technical Details can be found in the datasheet present at the end of this page.

Additional Information

Additional information

Weight 20 g


BD139-D datasheet


BD139 is a NPN transistor hence the collector and emitter will be left open (Reverse biased) when the base pin is held at ground and will be closed (Forward biased) when a signal is provided to base pin . BD139 has a gain value of 40 to 160, this value determines the amplification capacity of the transistor.

Note: Image may vary from actual product in terms of Manufacturer/Brand name according to the availability.

Technical Specification



No products in the cart.